Limits to Doping of Wide Band Gap Semiconductors
نویسندگان
چکیده
منابع مشابه
Defects, Impurities and Doping Levels in Wide-Band-Gap Semiconductors
A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....
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Doping limits in semiconductors are discussed in terms of the amphoteric defect model (ADM). It is shown that the maximum free electron or hole concentration that can be achieved by doping is an intrinsic property of a given semiconductor and is fully determined by the location of the semiconductor band edges with respect to a common energy reference, the Fermi level stabilization energy. The A...
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We propose a codoping method of using acceptors and donors simultaneously as a solution to the crucial doping problem, or unipolarity, of wide-band-gap semiconductors which exhibit an asymmetry in their ability to be doped as n-type or p-type. The deliberate codoping of donors is essential for the enhancement of acceptor incorporation, decrease of the binding energy of the acceptor impurity and...
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Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...
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Solid-state photon detectors based on semiconductors other than silicon are not yet considered mature technology but their current development opens new possibilities, also for space observations. Such devices are especially attractive for ultraviolet radiation detection, as semiconductor materials with band gaps larger than that of silicon can be produced and used as “visible-blind” or “solar-...
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ژورنال
عنوان ژورنال: Chemistry of Materials
سال: 2013
ISSN: 0897-4756,1520-5002
DOI: 10.1021/cm402237s